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  surface mount 1.5 w glass zener diodes scottsd a l e division 1n3016bur-1 thru 1n3051bur-1 (or mll3016b thru mll3051b) w w w . mi c r o s e m i . c o m 1n3 016 bur-1 thru 1n3 051 bur-1 descripti on appeara n c e this surfa c e mountabl e zener diode serie s is simil a r to the 1n3016 th ru 1n3 051 jedec re gistratio n in the do-1 3 pa ckage except that it m eets the surfa c e m oun t do-21 3 ab outline. it is an ideal sele ction for ap pli c ation s of high d e n s ity and lo w p a ra sitic requi rem ent s. due to its gla ss hermetic sea l qualitie s and metallurgi c al ly enhan ced internal con s t r uctio n , it is also well suited for hi g h -reliability application s . this can be acq u ire d by a sou r ce control drawi ng (scd), or by orde ri ng device type s with mq, m x , or mv prefix to part numbe r for e quivalent screenin g to jan, jantx o r jantxv. do -213 ab import a n t : f o r the most cur r e n t data, consult mi c r os e m i ? s w e bsite: http:// www .microsemi.com features a p p l i c at ions / be ne fi ts ? lea dless s u rfa c e mount pack age e q u i val ent s to the jedec reg i ste r ed 1n 301 6 thr u 1n3 0 5 1 e x ce pt w i t h hig her po w e r r a ting of 1.5 w a tts ? ideal for hi gh- d ensit y mou n tin g ? voltag e ran ge: 6.8 to 200 vo lts ? hermetica ll y s eal ed, do ubl e- slug g l ass con s truction ? metall urgic a ll y enh anc ed cont act constructio n . ? options for screen ing i n accor danc e w i th mil - prf - 195 00/1 15 for jan, jant x, jant xv, and jans w i t h mq, mx , mv, or msp pr efixes respectively f o r part numb e rs, e.g. mx1 n 30 1 6 bur-1, mv1n3 051b u r -1, etc. ? axi a l l ead ?thru - hol e? do-13 p a ckag e s per j e dec registrati on av aila bl e as 1n 3 016b thru 1n3 051b (see sep a rate data she e t w i th mil-prf - 195 00/11 5 qua lificati on) ? reg u lates v o ltage ov er a bro ad op erati ng c u rrent and temp eratur e rang e ? w i de sel e ction from 6.8 to 200 v ? t i ght voltage toler ances av ai l abl e ? lo w rev e rse (l eaka ge) curre n t s ? lea dless pack age for surfac e mountin g ? ideal for hi gh- d ensit y mou n tin g ? metall urgic a ll y enh anc ed inter nal co ntact des ign for greater re lia bil i t y an d lo w e r thermal resist anc e ? nons ensitiv e to esd ? hermetica ll y s eal ed gl ass pa ckage ? specifi ed ca pa citance (se e f i gure 2) ? inhere n tl y r adi ation h a rd as d e scrib ed in mic r osemi micronote 050 max i mu m rat ing s mechan ic al an d pa ckagin g ? po w e r d i ssip a ti on at 25 o c: 1.5 w a tts (als o se e derati ng in f i g u re 1). ? operatin g an d storage temp e r ature: -65 o c to + 175 o c ? t hermal resist ance: 40 o c/w juncti on to en d cap, or 120 o c/w jun c tion to ambi en t w h en mou n te d on f r 4 pc boar d (1 oz cu) w i th r e comme nde d footprint (see l a st page) ? stead y-state p o w e r: 1.50 w a t t s at end-cap temperatur e t ec < 115 o c, or 1.25 w a tts at t a = 2 5 o c w h e n mount ed on f r 4 pc bo ard an d recomme nde d footprint as d e scribe d for thermal resistanc e (als o see f i gur e 1) ? f o r w a r d vo ltag e @20 0 ma: 1.2 volts (maxim u m) ? sold er t e mperatures: 260 o c for 10 s (max ) ? case: herme ticall y se ale d gl ass melf pac kage ? t e rminals: lea ds, tin-le ad plated so ld era b le p e r mil-st d-750, method 2 0 2 6 ? polarit y : c a thod e in dicate d b y ban d. dio de to be op erate d w i th the ban ded end p o sitiv e w i th respect to the opp osite e nd for z ener reg u l a tion ? marking: cathode b a n d on l y ? t ape & reel optio nal: stan dard p e r eia-481-1-a w i t h 12 mm tap e , 1500 per 7 i n ch ree l or 50 0 0 per 13 inc h reel (a dd ?t r? suffix to part numb e r) ? w e igh t : 0.05 grams ? see pack a g e d i mensi ons o n l a st page m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 1 cop y right ? 200 2 11-03- 2003 re v c
surface mount 1.5 w glass zener diodes scottsd a l e division 1n3016bur-1 thru 1n3051bur-1 (or mll3016b thru mll3051b) w w w . mi c r o s e m i . c o m 1n3 016 bur-1 thru 1n3 051 bur-1 *electric a l ch ara cteri s tic s @ 25 o c m a xi mum ze ne r i m ped a n c e (n ote 2) nomin a l zene r vol t a g e v z @ i zt (n ot e 1) zene r t est curre n t i zt z zt @ i zt z zk @ i zk m a xi mum zene r curre n t i zm m a xi mum reve rse le a k a g e curre n t ? i r @ v r ty p i c a l te m p . c o e f f of zen e r vol t a g e vz indus t r y pa r t numbe r ** microsemi pa r t numbe r v o l t s ma o h ms o h ms ma ma a v o l t s % / o c 1n3016bu r -1 1n3017bu r -1 1n3018bu r -1 1n3019bu r -1 mll3016b mll3017b mll3018b mll3019b 6.8 7.5 8.2 9.1 37 34 31 28 3.5 4.0 4.5 5 700 700 700 700 1.0 .5 .5 .5 210 187.5 172.5 157.5 5 5 5 5 5.2 5.7 6.2 6.9 .040 .045 .048 .050 1n3020bu r -1 1n3021bu r -1 1n3022bu r -1 1n3023bu r -1 mll3020b mll3021b mll3022b mll3023b 10 11 12 13 25 23 21 19 7 8 9 10 700 700 700 700 .25 .25 .25 .25 142.5 127.5 120 111 5 1.0 1.0 0.5 7.6 8.4 9.1 9.9 .055 .060 .065 .065 1n3024bu r -1 1n3025bu r -1 1n3026bu r -1 1n3027bu r -1 mll3024b mll3025b mll3026b mll3027b 15 16 18 20 17 15.5 14.0 12.5 14 16 20 22 700 700 750 750 .25 .25 .25 .25 94.5 90 78 70.5 0.5 0.5 0.5 0.5 11.4 12.2 13.7 15.2 .070 .070 .075 .075 1n3028bu r -1 1n3029bu r -1 1n3030bu r -1 1n3031bu r -1 mll3028b mll3029b mll3030b mll3031b 22 24 27 30 11.5 10.5 9.5 8.5 23 25 35 40 750 750 1000 1000 .25 .25 .25 .25 64.5 60 51 46.5 0.5 0.5 0.5 0.5 16.7 18.2 20.6 22.8 .080 .080 .085 .085 1n3032bu r -1 1n3033bu r -1 1n3034bu r -1 1n3035bu r -1 mll3032b mll3033b mll3034b mll3035b 33 36 39 40 7.5 7.0 6.5 6.0 45 50 60 70 1000 1000 1000 1500 .25 .25 .25 .25 42 39 34.5 31.5 0.5 0.5 0.5 0.5 25.1 27.4 29.7 32.7 .085 .085 .090 .090 1n3036bu r -1 1n3037bu r -1 1n3038bu r -1 1n3039bu r -1 mll3036b mll3037b mll3038b mll3039b 47 51 56 62 5.5 5.0 4.5 4.0 80 95 110 125 1500 1500 2000 2000 .25 .25 .25 .25 28.5 27 25.5 22.5 0.5 0.5 0.5 0.5 35.8 38.8 42.6 47.1 .090 .090 .090 .090 1n3040bu r -1 1n3041bu r -1 1n3042bu r -1 1n3043bu r -1 mll3040b mll3041b mll3042b mll3043b 68 75 82 91 3.7 3.3 3.0 2.8 150 175 200 250 2000 2000 3000 3000 .25 .25 .25 .25 21 18 16.5 15 0.5 0.5 0.5 0.5 51.7 56.0 62.2 69.2 .090 .090 .090 .090 1n3044bu r -1 1n3045bu r -1 1n3046bu r -1 1n3047bu r -1 mll3044b mll3045b mll3046b mll3047b 100 110 120 130 2.5 2.3 2.0 1.9 350 450 550 700 3000 4000 4500 5000 .25 .25 .25 .25 13.5 12.45 12 10.35 0.5 0.5 0.5 0.5 76.0 83.6 91.2 98.8 .090 .095 .095 .095 1n3048bu r -1 1n3049bu r -1 1n3050bu r -1 1n3051bu r -1 mll3048b mll3049b mll3050b mll3051b 150 160 180 200 1.7 1.6 1.4 1.2 1000 1100 1200 1500 6000 6500 7000 8000 .25 .25 .25 .25 8.55 8.1 7.35 6.9 0.5 0.5 0.5 0.5 114.0 121.6 136.8 152.0 .095 .095 .095 .100 * jedec r egistere d data for 1n3016b thru 3051 b eq uiv a lents ex cept rev e rse (leakage ) curre nts i r are l o w e r and ma x i mum zener curre nt i zm i s higher . ** w hen appli c able , add mq, m x , mv , msp pre f ix for 1n3 016b to 1n3051b screening op tion s in accordan ce w i th mil-prf-19500/1 15. ? not j e dec dat a . note 1: suffix ?b? sho w n signifies a +/-5% toler ance on no minal zener voltage. no suffix desi gnates a +/-20 % and suffix ?a? is +/-10% . if tight er tolerance is required, suffix c is used to identif y +/ - 2 %; and suffix d is to identify +/- 1 % tolerance. v z i s measured w i th the diode in ther mal equilibr i um in 25 o c still air . t he test cur r ents ( i zt ) at nominal voltages provide a const ant 0.25 w a t t s for this device series. note 2: the zener imped ance is derived w h en a 60 c y cle ac current hav ing an rms value eq ual to 10% of t h e dc zener current (i zt or i zk ) i s superimposed on i zt or i zk . zener impedance is measured at 2 point s to ensure a sha r p knee on the br eakdo w n curve a nd to eliminate unstable units. see micronote 20 2 for variation in d y namic impeda nce w i th diffe rent zener curre nts. note 3: this product series has prev iously b een i dentified as mll3016b thru m ll3 051b b y microse m i. this alternate name ma y still be used, ho w e v e r the indust r y n a me of 1n30 16b ur-1 th ru 1n 305 1bur-1 is prefe r red. m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 2 cop y right ?
surface mount 1.5 w glass zener diodes m i cro semi scottsdale division 8700 e. thom as rd. po bo x 139 0, scottsdale, az 85252 usa, ( 4 8 0 ) 941- 6300, fax: (480) 947-1 503 page 3 cop y right ? w w w . mi c r o s e m i . c o m scottsd a l e division 1n3016bur-1 thru 1n3051bur-1 (or mll3016b thru mll3051b) 1n3 016 bur-1 thru 1n3 051 bur-1 graphs steady - sta t e po w e r derating p d po w e r di s s i pati o n (w atts) t a t ec t e mp er a t ur e ( o c ) figure 1 figure 2 power de rating curve w here t ec is end cap tem p t y pical capacita n ce vs. reverse voltage and t a is ambient temper ature on fr4 pc b oard. pac k ag e dim e n s io ns inch e s m i l l i m e t e r s dim m i n m a x m i n max a 0. 0 9 4 0 . 1 0 5 2. 3 9 2. 6 6 b 0. 1 8 9 0 . 2 0 5 4. 8 0 5. 2 0 c 0. 0 1 6 0 . 0 2 2 0. 4 1 0. 5 5 i n c h e s mm a . 2 7 6 7 . 0 0 b 0. 0 7 0 1 . 8 c 0. 1 1 0 2 . 8 pad layout figure 3 t y pical zener voltage temperature co eff. vs. zener vol t age


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